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Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes

Identifieur interne : 000765 ( Main/Repository ); précédent : 000764; suivant : 000766

Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes

Auteurs : RBID : Pascal:13-0151230

Descripteurs français

Pascal (Inist)
- Capacité électrique, Diode barrière Schottky, Caractéristique fréquentielle, Dépendance fréquence, Caractéristique électrique, Mesure électrique, Spectrométrie, Impédance électrique, Température ambiante, Résistance série, Etat interface, Tension polarisation, Basse fréquence, Facteur g, Phosphure d'indium, Composé binaire, 8530H, InP.
Wicri :
- concept : Spectrométrie.

English descriptors

KwdEn :
- Bias voltage, Binary compound, Capacitance, Electrical characteristic, Electrical impedance, Electrical measurement, Frequency characteristic, Frequency dependence, Indium phosphide, Interface state, Low frequency, Room temperature, Schottky barrier diode, Series resistance, Spectrometry, g factor.

Abstract

Frequency-dependent electrical characteristics of Ag/p-InP diodes have been determined using impedance spectroscopy at room temperature. Series resistance (R_s) and interface state(s) (N_ss) values were extracted from capacitance (C) and conductance (G/w) data using the Nicollian and Goetzberger and Hill-Coleman methods, respectively. C and G/w data were also corrected in the whole measured bias voltage range to obtain real diode capacitance C_c and conductance G_c values in order to see the effects of R_s. Both the C-V and R_s-V plots showed anomalous peak in depletion region especially at low frequencies due to the existence of N_ss. C-V and G/w-V plots crossed at a certain bias voltage and this point shifted toward negative bias voltages with increasing frequency and then disappeared at 3 MHz. Also, decrease in C values corresponds to an increase in G/w values in the same bias voltages.

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Pascal:13-0151230

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<author><name sortKey="Korucu, D" uniqKey="Korucu D">D. Korucu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Material Science and Engineering, Faculty of Engineering, Hakkari University</s1>
<s2>30000 Hakkari</s2>
<s3>TUR</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Turquie</country>
<wicri:noRegion>30000 Hakkari</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Turut, A" uniqKey="Turut A">A. Turut</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics Engineering, Faculty of Sciences, Istanbul Medeniyet University</s1>
<s2>34000 Istanbul</s2>
<s3>TUR</s3>
<sZ>2 aut.</sZ>
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<country>Turquie</country>
<wicri:noRegion>34000 Istanbul</wicri:noRegion>
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</author>
<author><name sortKey="Turan, R" uniqKey="Turan R">R. Turan</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, Faculty of Arts and Sciences, Middle East Technical University</s1>
<s2>06531 Ankara</s2>
<s3>TUR</s3>
<sZ>3 aut.</sZ>
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<country>Turquie</country>
<wicri:noRegion>06531 Ankara</wicri:noRegion>
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<author><name sortKey="Altindal, S" uniqKey="Altindal S">S. Altindal</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Physics, Faculty of Arts and Sciences, Gazi University</s1>
<s2>06500 Ankara</s2>
<s3>TUR</s3>
<sZ>4 aut.</sZ>
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<term>Capacitance</term>
<term>Electrical characteristic</term>
<term>Electrical impedance</term>
<term>Electrical measurement</term>
<term>Frequency characteristic</term>
<term>Frequency dependence</term>
<term>Indium phosphide</term>
<term>Interface state</term>
<term>Low frequency</term>
<term>Room temperature</term>
<term>Schottky barrier diode</term>
<term>Series resistance</term>
<term>Spectrometry</term>
<term>g factor</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Capacité électrique</term>
<term>Diode barrière Schottky</term>
<term>Caractéristique fréquentielle</term>
<term>Dépendance fréquence</term>
<term>Caractéristique électrique</term>
<term>Mesure électrique</term>
<term>Spectrométrie</term>
<term>Impédance électrique</term>
<term>Température ambiante</term>
<term>Résistance série</term>
<term>Etat interface</term>
<term>Tension polarisation</term>
<term>Basse fréquence</term>
<term>Facteur g</term>
<term>Phosphure d'indium</term>
<term>Composé binaire</term>
<term>8530H</term>
<term>InP</term>
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<front><div type="abstract" xml:lang="en">Frequency-dependent electrical characteristics of Ag/p-InP diodes have been determined using impedance spectroscopy at room temperature. Series resistance (R<sub>s</sub>
) and interface state(s) (N<sub>ss</sub>
) values were extracted from capacitance (C) and conductance (G/w) data using the Nicollian and Goetzberger and Hill-Coleman methods, respectively. C and G/w data were also corrected in the whole measured bias voltage range to obtain real diode capacitance C<sub>c</sub>
 and conductance G<sub>c</sub>
 values in order to see the effects of R<sub>s</sub>
. Both the C-V and R<sub>s</sub>
-V plots showed anomalous peak in depletion region especially at low frequencies due to the existence of N<sub>ss</sub>
. C-V and G/w-V plots crossed at a certain bias voltage and this point shifted toward negative bias voltages with increasing frequency and then disappeared at 3 MHz. Also, decrease in C values corresponds to an increase in G/w values in the same bias voltages.</div>
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<sZ>1 aut.</sZ>
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<sZ>2 aut.</sZ>
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<fA14 i1="03"><s1>Department of Physics, Faculty of Arts and Sciences, Middle East Technical University</s1>
<s2>06531 Ankara</s2>
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<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>Department of Physics, Faculty of Arts and Sciences, Gazi University</s1>
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<s3>TUR</s3>
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<fC01 i1="01" l="ENG"><s0>Frequency-dependent electrical characteristics of Ag/p-InP diodes have been determined using impedance spectroscopy at room temperature. Series resistance (R<sub>s</sub>
) and interface state(s) (N<sub>ss</sub>
) values were extracted from capacitance (C) and conductance (G/w) data using the Nicollian and Goetzberger and Hill-Coleman methods, respectively. C and G/w data were also corrected in the whole measured bias voltage range to obtain real diode capacitance C<sub>c</sub>
 and conductance G<sub>c</sub>
 values in order to see the effects of R<sub>s</sub>
. Both the C-V and R<sub>s</sub>
-V plots showed anomalous peak in depletion region especially at low frequencies due to the existence of N<sub>ss</sub>
. C-V and G/w-V plots crossed at a certain bias voltage and this point shifted toward negative bias voltages with increasing frequency and then disappeared at 3 MHz. Also, decrease in C values corresponds to an increase in G/w values in the same bias voltages.</s0>
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<s5>11</s5>
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Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes

Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

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Pour mettre un lien sur cette page dans le réseau Wicri